电信科学 ›› 2010, Vol. 26 ›› Issue (4): 81-84.doi: 10.3969/j.issn.1000-0801.2010.04.023

• 研究与开发 • 上一篇    下一篇

一种用于TDD通信模式的大功率射频开关

黄贞松,杨磊   

  1. 南京电子器件研究所 南京210016
  • 出版日期:2010-04-15 发布日期:2010-04-15
  • 基金资助:
    国家发改委“新一代宽带无线通信射频器件及模块研发和产业化”资助项目

A High Power RF Switch for TDD Communication Mode

Zhensong Huang,Lei Yang   

  1. Nanjing Electronic Devices Institute,Nanjing 210016,China
  • Online:2010-04-15 Published:2010-04-15

摘要:

采用氧化铝陶瓷基板、硅外延法制作的PIN 二极管芯片,MCM(多芯片组装工艺)技术设计的功率开关,在1~3 GHz 频带内插入损耗小于0.5 dB,可通过CW 功率60 W,隔离度大于45 dB,尺寸为8 mm × 8 mm,解决了射频大功率开关量产困难的问题,在我国的TD-SCDMA移动通信网中得到了广泛应用。

关键词: 氧化铝陶瓷基板, MCM, 大功率, 开关

Abstract:

Using Al2O3ceramic substrate and silicon PIN diode,the switch is fabricated in MCM technology.The device can control signals from 1.0 to 3.0 GHz with only 0.5 dB insertion loss.The design provides exceptional power handling performance: maximal input CW power=60 W and isolation≥45 dB.The size of the whole module is 8 mm ×8 mm.Being volume-produced,this switch has been used widely in TD-SCDMA and WiMAX.

Key words: Al2O3ceramic substrate, MCM, high power, switch

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