Telecommunications Science ›› 2010, Vol. 26 ›› Issue (4): 81-84.doi: 10.3969/j.issn.1000-0801.2010.04.023

• Ressearch and development • Previous Articles     Next Articles

A High Power RF Switch for TDD Communication Mode

Zhensong Huang,Lei Yang   

  1. Nanjing Electronic Devices Institute,Nanjing 210016,China
  • Online:2010-04-15 Published:2010-04-15

Abstract:

Using Al2O3ceramic substrate and silicon PIN diode,the switch is fabricated in MCM technology.The device can control signals from 1.0 to 3.0 GHz with only 0.5 dB insertion loss.The design provides exceptional power handling performance: maximal input CW power=60 W and isolation≥45 dB.The size of the whole module is 8 mm ×8 mm.Being volume-produced,this switch has been used widely in TD-SCDMA and WiMAX.

Key words: Al2O3ceramic substrate, MCM, high power, switch

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